Analysis and optimization of advanced injection logic

Key physical factors governing advanced integrated injection logic (IIL) device behavior are analyzed. Bipolar clamping configurations applicable to IIL are surveyed, and the saturation control principle in a bipolar-clamped Schottky IIL device is outlined and its dynamic behavior analyzed. The Schottky coupled IIL (SCIIL) is considered, emphasizing some inherent parasitic effects which may hamper its speed performance at high current levels. The minority carrier injection phenomenon at a Schottky barrier junction is investigated, and optimization of IIL speed performance is quantitatively treated. The IIL dynamic property is studied in relation to the intrinsic-base sheet-resistance value and scaling under several conditions and the analysis is applied to various device technologies and configurations. The influence of dielectric isolation on device performance is considered, and some logic structures and a memory cell technologically related to SCIIL devices are discussed.