Self-excited oscillations in semiconductor ring structures
Abstract
Self-excited oscillations were observed experimentally for an n-GaAs ring structure with distributed negative bulk differential conductivity. the resonant frequency radiating from a ring structure with an outer diameter of 340 microns was 54 GHz; when a structure with a diameter twice as large (680 microns) was used, the frequency decreased by a factor of two (27 GHz). The frequency of the radiation was determined by the resonant wavelength and did not depend on the external circuit.
- Publication:
-
Pisma v Zhurnal Tekhnischeskoi Fiziki
- Pub Date:
- May 1983
- Bibcode:
- 1983PZhTF...9..626A
- Keywords:
-
- N-Type Semiconductors;
- Ring Structures;
- Self Excitation;
- Self Oscillation;
- Gallium Arsenides;
- Microwaves;
- Resonant Frequencies;
- Semiconductors (Materials);
- Waveguides;
- Electronics and Electrical Engineering