Second generation infrared imaging systems require high-density focal plane arrays for staring applications. To meet this need, a focal plane structure using HgedTe photodiodes for detectors and Si charge-coupled devices (CCDs) for signal processing has been developed. Although conventional ion-implanted hybrid arrays have successfully been interfaced to CCD multiplexers, hybrid arrays fabricated on liquid phase epitaxial (LPE) layers. offer some inherent advantages with respect to performance, processing and yields. It has been determined that heterostructure diodes fabricated by a Hg infinite-melt LPE technique give superior performance relative to conventional ion-implanted devices. The devices exhibit high RoA products and good compositional uniformity. Data are presented on devices fabricated for both 8 to 12 um and 3 to 5 um applications.