New GaAs Impatt theory explains mm-wave operation
Abstract
An abrupt increase in power and efficiency has been observed in GaAs Impatts during large-signal operation. For example, near 40 GHz, GaAs Impatts have produced more than 3 W of CW power with an efficiency exceeding 21.4%. This performance is explained by a newly defined physical phenomenon, the delayed secondary avalanching (DSA) of minority carriers in the drift zone of the GaAs Impatt during large-signal operation. The DSA effects have been simulated on a computer and correlated with experimental observations of efficiency, CW and pulsed power, and other variables in GaAs Impatt operation at millimeter-wave frequencies. By analyzing the data derived from a series of simulations, it is concluded that an efficient and powerful GaAs Impatt can be designed for 95 GHz and may be the next power source for reliable millimeter-wave systems.
- Publication:
-
Microwaves
- Pub Date:
- February 1983
- Bibcode:
- 1983MicWa..22...74T
- Keywords:
-
- Avalanche Diodes;
- Computerized Simulation;
- Energy Conversion Efficiency;
- Gallium Arsenides;
- Microwave Oscillators;
- Millimeter Waves;
- Carrier Density (Solid State);
- Continuous Radiation;
- Ion Impact;
- Minority Carriers;
- Pulsed Radiation;
- Reliability Engineering;
- Transit Time;
- Electronics and Electrical Engineering