State of the art of solid-state and tube transmitters
Abstract
The present study has the aim to complement a survey of solid-state mm-wave transmitters conducted by Ying (1983). Additional data points at microwave frequencies are provided, efficiency values for each data point are included, and selected aspects of microwave and mm-wave tube performance are discussed. Below 40 GHz the gallium arsenide IMPATTs are found to have higher powers and efficiencies than silicon IMPATTs. Above 60 GHz the silicon devices appear to outperform the GaAs IMPATTs. Gunn diode oscillators have better noise performance than IMPATTs.
- Publication:
-
Microwave Journal
- Pub Date:
- October 1983
- Bibcode:
- 1983MiJo...26...46H
- Keywords:
-
- Microwave Tubes;
- Millimeter Waves;
- Power Efficiency;
- Radio Transmitters;
- Solid State Devices;
- Technology Assessment;
- Avalanche Diodes;
- Continuous Radiation;
- Gallium Arsenides;
- Gunn Diodes;
- Microwave Oscillators;
- Performance Tests;
- Silicon;
- Electronics and Electrical Engineering