Calculation of the thermal parameters of semiconductor devices  Method of equivalents
Abstract
The method of equivalents is developed to calculate the thermal resistances and transition characteristics of semiconductor devices. The problem of determining the temperature distribution across the structural layers of the device (crystal, metaloxide semiconductor, solders, or enclosure) is limited to determining the temperature of the pn junction, i.e., the heat source. Complex thermal models for multilayered structures with aggregate heat sources on their surface are developed with a minimum of error resulting from simplifications. Topics of discussion include features of thermal calculations of semiconductor devices; equivalents and their simplifications; the interaction of sources; and multilayered wafers. For steadystate thermal regimes solutions may be obtained with or without the use of a computer. Highly economical computer solutions are presented for transient problems. Example calculations are provided for the thermal resistance of a highpower microwave transistor with enclosureheat sink contact resistance; thermal resistance of an FET accounting for the temperature dependence of thermal conductivity; and superheating of the pn junction of a microwave transistor in pulsed operation. The equations and computer programs are included.
 Publication:

Moscow Izdatel Radio Sviaz
 Pub Date:
 1983
 Bibcode:
 1983MIzRS....R....Z
 Keywords:

 Semiconductor Devices;
 Thermal Resistance;
 Transient Response;
 Asymptotic Methods;
 Avalanche Diodes;
 Computer Programs;
 Error Analysis;
 Field Effect Transistors;
 Heat Sources;
 Microwave Equipment;
 PN Junctions;
 Sandwich Structures;
 Unsteady State;
 Electronics and Electrical Engineering