0.5 micron GaAs FET for low-noise circuits for Orbital Test Satellite reception
Abstract
A GaAs FET with 0.5 micron gate length is discussed which meets the requirement of a receiver noise level of less than 4.5 dB in the Orbital Test Satellite. The converter front end characterized here is manufactured with hybrid technology, has a typical noise figure of 3.7 dB, a gain of 36 dB or more, and includes a monolithic integrated IF amplifier. With a 3 m antenna dish the figure of merit for the receiving station is about 18.5 dB/K.
- Publication:
-
Kleinheubacher Berichte
- Pub Date:
- 1983
- Bibcode:
- 1983KlBer..26..217L
- Keywords:
-
- Field Effect Transistors;
- Gallium Arsenides;
- Low Noise;
- Microwave Circuits;
- Ots (Esa);
- Satellite Antennas;
- Astrionics;
- Hybrid Circuits;
- Integrated Circuits;
- Microwave Antennas;
- Receivers;
- Signal To Noise Ratios;
- Electronics and Electrical Engineering