High Al-Content Visible (AlGa)As Multiple Quantum Well Heterostructure Lasers Grown by Metalorganic Chemical Vapor Deposition

High Al-content multiple quantum well heterostructure lasers, consisting of five (Al_0.14Ga_0.86)As wells 150 Å thick separated by four (Al_0.35Ga_0.65)As barriers 40 Å thick have been grown by metalorganic chemical vapor deposition (MOCVD) in an atmospheric pressure. The laser with a self aligned narrow stripe geometry is formed by the two step epitaxial technique. The room temperature CW threshold current for a device 250 μm long is typically 50 mA, which is 30% less than that of a conventional DH laser of the same geometry. Emission wavelength is 782 nm and the characteristic temperature T₀ is 232 K.