InGaAsP/InP Mushroom Stripe Lasers with Low CW Threshold and High Output Power
Abstract
We report on InGaAsP/InP mushroom stripe lasers, for which a technique has been developed to precisely control the width of the active layer. Both p-substrate upside up mounted and n-substrate upside down mounted devices were fabricated. The lasers emit at λ{=}1.3 μm having a CW threshold as low as 18 mA, an external differential efficiency of up to 0.30 W/A at 200°C and a characteristic temperature T0{=}65 K. An output CW power in the fundamental transverse mode of 18 mW/mirror was obtained for upside up mounting. A 960 Mbit/sec RZ modulation is demonstrated.
- Publication:
-
Japanese Journal of Applied Physics
- Pub Date:
- November 1983
- DOI:
- 10.1143/JJAP.22.L721
- Bibcode:
- 1983JaJAP..22L.721B
- Keywords:
-
- Continuous Wave Lasers;
- Gallium Arsenide Lasers;
- High Power Lasers;
- Indium Phosphides;
- Laser Outputs;
- Heterojunction Devices;
- Semiconductor Lasers;
- Silicon Dioxide;
- Substrates;
- Lasers and Masers