A 1.59 μm Wavelength GaInAsP/InP Distributed Feedback Laser with First-Order Grating on Anti-Meltback Layer
Abstract
A 1.59 μm wavelength GaInAsP/InP distributed feedback laser with first-order grating has been fabricated by a two-step liquid phase epitaxial (LPE) growth. The first-order grating was formed on the anti-meltback layer grown on the active layer. The threshold current was 680 mA for 18 μm stripe width and 510 μm cavity length and single-longitudinal-mode operation was obtained from -50 to 0°C.
- Publication:
-
Japanese Journal of Applied Physics
- Pub Date:
- June 1983
- DOI:
- Bibcode:
- 1983JaJAP..22L.348U
- Keywords:
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- Gallium Arsenide Lasers;
- Indium Phosphides;
- Infrared Lasers;
- Laser Modes;
- Feedback;
- Liquid Phase Epitaxy;
- Threshold Currents;
- Lasers and Masers