GaInAs-AlInAs heterostructures for optical devices grown by MBE
Abstract
The band gap of Ga(0.47)In(0.53)As corresponds to an emission wavelength of about 1.65 microns. Lasers have been produced with Al(0.48)In(0.52)As as cladding layers operating at room temperature. The peak emission of Ga(0.47)In(0.53)As can be continuously varied from 1.65 to 1.2 microns by the use of the multiquantum well structures. This range of wavelengths covers the minimum loss and dispersion in optical fibers and will be applicable to integrated optics. Double heterostructure broad area lasers have been fabricated using AlInAs as cladding layers to the GaInAs active layer. Room temperature threshold current densities of 4.3 kA/sq cm have been obtained for lasers with a 4500 A active region. The first data on GaInAs/AlInAs quantum well emitters will be presented. Photoluminescence of 4 K from quantum well layers of 100, 150, and 180 A with 150 A AlInAs barrier layers produced emission at 1.27, 1.35, and 1.41 microns, respectively. Ga(0.47)In(0.52)As quantum well LEDs have also been produced which emit at 1.34 microns.
- Publication:
-
Journal of Vacuum Science Technology B: Microelectronics and Nanometer Structures
- Pub Date:
- April 1983
- DOI:
- 10.1116/1.582488
- Bibcode:
- 1983JVSTB...1..202W
- Keywords:
-
- Fiber Optics;
- Heterojunction Devices;
- Integrated Optics;
- Molecular Beam Epitaxy;
- Quantum Efficiency;
- Semiconductor Lasers;
- Aluminum Gallium Arsenides;
- Gallium Arsenide Lasers;
- Indium Arsenides;
- Infrared Lasers;
- Laser Outputs;
- Optical Fibers;
- Electronics and Electrical Engineering