Computer Simulation and Controlled Growth of Large Diameter Czochralski Silicon Crystals
Abstract
Computer simulation leading to controlled large diameter Czochralski crystal growth is discussed. A simple mathematical model, which describes the different crystal growth phases including neck-in, fast flat top, roll-over to constant diameter bulk growth, and tail-off is presented. This model, in conjunction with a computer-implemented simulator, is used to simulate silicon crystal growth. Good agreement between simulation results and experimental crystal growth is obtained.
- Publication:
-
Journal of the Electrochemical Society
- Pub Date:
- May 1983
- DOI:
- 10.1149/1.2119907
- Bibcode:
- 1983JElS..130.1156K
- Keywords:
-
- Computerized Simulation;
- Crystal Growth;
- Czochralski Method;
- Mathematical Models;
- Process Control (Industry);
- Silicon Films;
- Control Simulation;
- Diameters;
- Exponential Functions;
- Fabrication;
- Programming (Scheduling);
- Temperature Control;
- Temperature Dependence;
- Solid-State Physics