Sputter Depth Profiling of Microelectronic Structures

A review is provided of the principles and applications of sputter depth profiling for the analysis of semiconductor and microelectronic materials. Of special interest is the measurement of elemental distributions, in particular, the determination of dopant distributions in the semiconductor substrate, and the analysis of diffusive and reactive processes involving the basic elements of microelectronic structures, which include metal, semiconductor, and dielectric films. An overview of methods for the measurement of depth profiles is presented in a table. The so-called nondestructive techniques do not necessarily leave the sample undamaged, but, in connection with their application, the sample surface does not have to be removed in order to obtain information about the inside. The destructive methods rely on the removal of the surface. Attention is given to distorting effects, depth resolution, and dopant and impurity distributions in semiconductors.