Design of new structural high breakdown voltage V-MOSFET Static Shield V-MOSFET

Electric field crowding at the bottom of the V-groove render high breakdown voltage V-MOSFETs difficult to obtain. A novel V-MOSFET structure is proposed for which a reverse blocking voltage design method and an on-resistance model have been developed. A device fabricated along the new lines has a breakdown voltage 1.7 times greater than conventional devices. The performance prediction formula proposed indicates a 10 percent increase in on-resistance for the novel V-MOSFET type over the conventional.