Properties of NbN thin films deposited on ambient temperature substrates
Abstract
The preparation of cubic NbN films by reactive dc magnetron sputtering is described. These superconductive films are deposited at a sufficiently low temperature (<90 °C) that photoresist liftoff techniques and can be used in fabricating Josephson junctions. The superconducting transition temperature has been measured as a function of gas composition and pressure. It reaches a maximum of 14.2 K at 15% N2-85% Ar and 1.06 Pa total pressure. The resistivity ratio of these films is close to unity. Structural studies by transmission electron microscopy and electron diffraction show that films 100-nm thick or less are randomly oriented, and noncolumnar with a crystallite diameter of 5 nm and a lattice parameter of 4.46 Å, which is significantly higher than the bulk value for cubic NbN. The films are dense with void diameters no larger than 0.7 nm. Films 300-400 nm thick show a small degree of texturing in x-ray studies with a Read camera. Auger analysis shows a monotonic increase in the N/Nb ratio with increase in the N2/Ar ratio in the sputtering ambient up to 30% N2. From 30% to 50% N2 in the sputtering mixture the N/Nb ratio is constant. Small amounts of carbon impurity are found in all films.
- Publication:
-
Journal of Applied Physics
- Pub Date:
- November 1983
- DOI:
- 10.1063/1.331881
- Bibcode:
- 1983JAP....54.6509B
- Keywords:
-
- Niobium Compounds;
- Nitrides;
- Sputtering;
- Superconductors;
- Thin Films;
- Transition Temperature;
- Ambient Temperature;
- Electrical Resistivity;
- Electron Microscopy;
- Fabrication;
- Josephson Junctions;
- Substrates;
- Vapor Deposition;
- Solid-State Physics