Neutron transmutation doping of silicon
Abstract
The properties of silicon obtained by using the method of neutron transmutation doping are investigated. In particular, attention is given to the effect of the interaction of radiation defects with structural defects and impurity atoms on the formation of the electrophysical properties of silicon. By analyzing experimental results and data in the literature, it is shown that neutron transmutation doping can be used to produce silicon single crystals with specified properties. The possible mechanisms of the interaction between radiation and point defects in the crystals are identified.
- Publication:
-
Tashkent Izdatel Fan
- Pub Date:
- 1983
- Bibcode:
- 1983IzTas.........Z
- Keywords:
-
- Additives;
- Doped Crystals;
- Neutrons;
- Nuclear Reactions;
- Silicon;
- Transmutation;
- Cobalt;
- Crystal Defects;
- Donor Materials;
- Electrophysics;
- Manganese;
- Microstructure;
- Radiation Damage;
- Single Crystals;
- Solid-State Physics