Dose dependence of single event upset rate in MOS dRAMs
Abstract
The upset sensitivity of MOS dynamic RAMs has been found to decrease as a result of total dose irradiation, both for cobalt-60 gammas and MeV helium ions, up to the point where device failure is imminent. Device failure levels have been compared for cobalt-60 gammas, and MeV helium ions and protons. It has been found that in terms of rad(Si) necessary to cause device failure, cobalt-60 was more effective than protons which were more effective than helium ions.
- Publication:
-
IEEE Transactions on Nuclear Science
- Pub Date:
- December 1983
- DOI:
- Bibcode:
- 1983ITNS...30.4508K
- Keywords:
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- Circuit Protection;
- Energetic Particles;
- Metal Oxide Semiconductors;
- Radiation Tolerance;
- Random Access Memory;
- Cobalt;
- Helium Ions;
- Irradiation;
- Spacecraft Electronic Equipment;
- Electronics and Electrical Engineering