Transient radiation effects at X-band in GaAs FETs and ICs
Abstract
Transient radiation effects following 20-60 ns electron pulses were measured in GaAs FETs and ICs operating at X-band. Long-term transients in RF output power and drain current were observed in all devices and ICs except FETs fabricated with a buried p-layer. Only the prompt (20 ns) photocurrent response was observed in FETs with a buried p-layer. The long-term transients are explained by a model of substrate trapping and backgating.
- Publication:
-
IEEE Transactions on Nuclear Science
- Pub Date:
- December 1983
- DOI:
- Bibcode:
- 1983ITNS...30.4205A
- Keywords:
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- Field Effect Transistors;
- Gallium Arsenides;
- Integrated Circuits;
- Radiation Effects;
- Superhigh Frequencies;
- Transient Response;
- Ionizing Radiation;
- P-Type Semiconductors;
- Radiation Hardening;
- Electronics and Electrical Engineering