Radiation-Induced Interface States of Poly-Si Gate MOS Capacitors Using Low Temperature Gate Oxidation
Abstract
The effect of gate oxidation temperature on radiation-induced flatband and threshold voltage shifts and interface state buildup for steady-state Co60 irradiation have been studied for poly-Si gate MOS capacitors with pyrogenic and dry gate oxides. The smallest radiation-induced flatband and threshold voltage shifts can be achieved with a pyrogenic oxide grown at 850°C. Total dose effects, applied gate bias during the irradiation and oxide thickness dependence were also evaluated for low temperature pyrogenic oxide MOS capacitors. We obtained a 2/3 power law dependence of radiation-induced interface states on the total dose and the oxide thickness.
- Publication:
-
IEEE Transactions on Nuclear Science
- Pub Date:
- December 1983
- DOI:
- 10.1109/TNS.1983.4333080
- Bibcode:
- 1983ITNS...30.4054N
- Keywords:
-
- Capacitors;
- Metal Oxide Semiconductors;
- Oxidation;
- Radiation Effects;
- Silicon Transistors;
- Temperature Effects;
- Film Thickness;
- Polycrystals;
- Radiation Dosage;
- Silicon Dioxide;
- Solid-Solid Interfaces;
- Threshold Voltage;
- Thresholds;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering