Low-noise MESFET's for ion-implanted GaAs MMIC's
Abstract
Fabrication considerations for low-noise FET's in ion-implanted GaAs monolithic microwave integrated circuits (MMIC's) are presented. Processes that can deteriorate FET performance have been identified and some solutions proposed. Low-noise MMIC FET's fabricated along these lines show good microwave performance through 18 GHz, approaching the performance available from similar discrete FET's. MMIC FET's with a gate length of 0.8 micron and a noise figure of 2.9 dB and associated gain of 6.1 dB at 18 GHz have been fabricated. These devices are suitable for low-noise applications in ion-implanted GaAs MMIC's.
- Publication:
-
IEEE Transactions on Microwave Theory Techniques
- Pub Date:
- December 1983
- DOI:
- 10.1109/TMTT.1983.1131664
- Bibcode:
- 1983ITMTT..31.1072G
- Keywords:
-
- Field Effect Transistors;
- Gallium Arsenides;
- Integrated Circuits;
- Ion Implantation;
- Low Noise;
- Microwave Circuits;
- Contact Resistance;
- Fabrication;
- Heat Treatment;
- Schottky Diodes;
- Temperature Dependence;
- Electronics and Electrical Engineering