Optical control of GaAs MESFET's
Abstract
Results of experimental work carried out to assess the effects of illumination in the control of relevant GaAs MESFETs functions, namely the gain of FET amplifiers, the frequency tuning, and the phase locking of FET oscillators, are presented. A simple model to estimate the effects of light on the dc and RF properties of the devices is given. Photoconductive and photovoltaic effects in the active channel and substrate are considered to predict the change in the dc equivalent circuit parameters of the FET, and from these the new Y and S parameters under illumination are calculated. The control of the gain of FET amplifiers and of the frequency of FET oscillators is obtained by varying the intensity of a CW optical signal absorbed in the active region of the device. An analytical expression to estimate the optical injection locking range is presented.
- Publication:
-
IEEE Transactions on Microwave Theory Techniques
- Pub Date:
- October 1983
- DOI:
- Bibcode:
- 1983ITMTT..31..812D
- Keywords:
-
- Electronic Control;
- Field Effect Transistors;
- Gallium Arsenides;
- Optical Coupling;
- Photovoltaic Effect;
- Schottky Diodes;
- Volt-Ampere Characteristics;
- Equivalent Circuits;
- Frequency Control;
- Injection Locking;
- Phase Locked Systems;
- Photoconductivity;
- Photoelectric Effect;
- Power Gain;
- Transistor Amplifiers;
- Electronics and Electrical Engineering