Microwave characteristics of an optically controlled GaAs MESFET
Abstract
This paper presents the results of an experimental investigation of microwave characteristics of a GaAs MESFET under optically direct-controlled conditions. The gain, drain current, and S-parameters were measured under various optical conditions in the frequency region from 3.0 GHz to 8.0 GHz., and it was found that they can be controlled by varying the incident light intensity in the same manner as when varying the gate bias voltage. As applications of this phenomenon, optical/microwave transformers and an optically switched amplifiers were investigated.
- Publication:
-
IEEE Transactions on Microwave Theory Techniques
- Pub Date:
- July 1983
- DOI:
- Bibcode:
- 1983ITMTT..31..596M
- Keywords:
-
- Field Effect Transistors;
- Gallium Arsenides;
- Light Modulation;
- Microwave Transmission;
- Schottky Diodes;
- Beam Switching;
- Frequency Response;
- Power Gain;
- Spectral Sensitivity;
- Transformers;
- Electronics and Electrical Engineering