A limiter for high-power millimeter-wave systems
Abstract
A high-power limiter for use in millimeter-wave systems has been designed and demonstrated. The RF control is provided by an array of p-i-n diodes fabricated into the surface of a high-resistivity silicon window. Orientation-dependent etching of the silicon is used to build diodes with parallel injection surfaces. The window is mounted into the waveguide using a metal membrane which simplifies construction and lowers cost.
- Publication:
-
IEEE Transactions on Microwave Theory Techniques
- Pub Date:
- February 1983
- DOI:
- Bibcode:
- 1983ITMTT..31..238A
- Keywords:
-
- Integrated Circuits;
- Limiter Circuits;
- Microwave Circuits;
- Millimeter Waves;
- P-I-N Junctions;
- Power Conditioning;
- Cost Reduction;
- Electrical Resistivity;
- Fabrication;
- Junction Diodes;
- Radio Control;
- Silicon Junctions;
- Waveguides;
- Electronics and Electrical Engineering