Large-signal modeling of GaAs MESFET operation
Abstract
A numerical modeling technique is described which allows the accurate large-signal characterization of highly doped (more than 10 to the 23rd/cu m) GaAs MESFETs. A rigourous two-dimensional numerical analysis is used to extract the FET terminal currents. Specially formulated finite difference equations are used to produce stable, accurate, and efficient solutions. By embedding the device in a simple circuit model, a two-terminal time domain response is obtained which is Fourier analyzed to produce a 'device surface'. The technique is applied to the analysis and design of a Ku-band monolithic microwave oscillator, using a 0.5 micron gate length MESFET. A simple equivalent circuit model is proposed which predicts an output of 4 dBm at 16.2 GHz for this oscillator.
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- December 1983
- DOI:
- 10.1109/T-ED.1983.21451
- Bibcode:
- 1983ITED...30.1817S
- Keywords:
-
- Doped Crystals;
- Field Effect Transistors;
- Gallium Arsenides;
- Microwave Circuits;
- Microwave Oscillators;
- Network Analysis;
- Schottky Diodes;
- Carrier Density (Solid State);
- Electrical Impedance;
- Equivalent Circuits;
- Integrated Circuits;
- Lumped Parameter Systems;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering