Largesignal modeling of GaAs MESFET operation
Abstract
A numerical modeling technique is described which allows the accurate largesignal characterization of highly doped (more than 10 to the 23rd/cu m) GaAs MESFETs. A rigourous twodimensional numerical analysis is used to extract the FET terminal currents. Specially formulated finite difference equations are used to produce stable, accurate, and efficient solutions. By embedding the device in a simple circuit model, a twoterminal time domain response is obtained which is Fourier analyzed to produce a 'device surface'. The technique is applied to the analysis and design of a Kuband monolithic microwave oscillator, using a 0.5 micron gate length MESFET. A simple equivalent circuit model is proposed which predicts an output of 4 dBm at 16.2 GHz for this oscillator.
 Publication:

IEEE Transactions on Electron Devices
 Pub Date:
 December 1983
 DOI:
 10.1109/TED.1983.21451
 Bibcode:
 1983ITED...30.1817S
 Keywords:

 Doped Crystals;
 Field Effect Transistors;
 Gallium Arsenides;
 Microwave Circuits;
 Microwave Oscillators;
 Network Analysis;
 Schottky Diodes;
 Carrier Density (Solid State);
 Electrical Impedance;
 Equivalent Circuits;
 Integrated Circuits;
 Lumped Parameter Systems;
 VoltAmpere Characteristics;
 Electronics and Electrical Engineering