Two-dimensional effects in hot-electron modified MOSFET's
Abstract
The asymmetrical behavior of hot-electron-modified MOSFETs with respect to swapping of source and drain is attributed to two-dimensional effects taking place within the transition region separating the device channel from the terminal junctions. In particular, experimental data concerning enhanced threshold-voltage shift, asymmetrical transconductance, anomalous body effect, and the short-channel-like behavior exhibited by the stressed transistors are presented and discussed.
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- October 1983
- DOI:
- 10.1109/T-ED.1983.21315
- Bibcode:
- 1983ITED...30.1416L
- Keywords:
-
- Field Effect Transistors;
- Hot Electrons;
- Metal Oxide Semiconductors;
- Volt-Ampere Characteristics;
- Computerized Simulation;
- Integrated Circuits;
- Potential Energy;
- Threshold Voltage;
- Thresholds;
- Electronics and Electrical Engineering