Optimum semiconductors for high-frequency and low-noise MESFET applications
Abstract
An analytic MESFET device model has been used to study the optimum velocity-field characteristics of materials that are potentially useful for millimeter-wave and low-noise MESFET applications. Materials of current interest have been characterized and compared. Results explain the relative importance of parameters such as low-field mobility and saturated velocity. Differences between GaAs and Si performance are explained and a number of attractive compound semiconductors for high-frequency and low-noise device fabrications are indicated.
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- October 1983
- DOI:
- Bibcode:
- 1983ITED...30.1411G
- Keywords:
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- Carrier Mobility;
- Field Effect Transistors;
- Low Noise;
- Microwave Circuits;
- Schottky Diodes;
- Semiconductors (Materials);
- Fabrication;
- Frequency Response;
- Gallium Arsenides;
- Millimeter Waves;
- Optimization;
- Silicon;
- Electronics and Electrical Engineering