Fabrication and analysis of 1/2 micron silicon logic MESFET's
Abstract
Submicrometer-gate-length MESFET logic on silicon-on-sapphire (SOS) has been explored for very-high-speed switching. The measured values for gate length, current-drive capability, transconductance, output conductance, pinchoff voltage, and knee voltage are 0.65 micron, 0.11 A/cm, 200 mS/cm, 5.6 mS/cm, -1 V, and 0.65 V, respectively. Time-dependent two-dimensional simulation methods based on realistic models for doping profiles, high-field transport, and interfaces have been used for analysis. The sensitivity of the device characteristics has also been simulated. Simulated results are in excellent agreement with measured data.
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- October 1983
- DOI:
- 10.1109/T-ED.1983.21306
- Bibcode:
- 1983ITED...30.1395N
- Keywords:
-
- Fabrication;
- Field Effect Transistors;
- Logic Circuits;
- Silicon Films;
- Sos (Semiconductors);
- Thin Films;
- Computerized Simulation;
- Integrated Circuits;
- Logical Elements;
- Packing Density;
- Schottky Diodes;
- Two Dimensional Models;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering