Bulk-barrier transistor
Abstract
Experimental and theoretical results are presented on a bulk-barrier transistor (BBT). In this device the charge-carrier transportation is determined by an energy barrier, which is located inside a semiconductor. The barrier is the result of a space-charge region in a three-layered n-p-n or p-n-p structure with a very thin middle layer. The height of the energy barrier, which is adjustable by technological parameters, can be controlled by an external voltage.
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- October 1983
- DOI:
- 10.1109/T-ED.1983.21303
- Bibcode:
- 1983ITED...30.1380M
- Keywords:
-
- Energy Bands;
- Junction Transistors;
- N-P-N Junctions;
- P-N-P Junctions;
- Space Charge;
- Volt-Ampere Characteristics;
- Barrier Layers;
- Bipolar Transistors;
- Carrier Transport (Solid State);
- Electron Diffusion;
- Electronics and Electrical Engineering