Simulation of GaAs IMPATT diodes including energy and velocity transport equations
Abstract
Simulations have been performed of GaAs hybrid double-drift IMPATT diodes at 60 and 94 GHz using a transport model which includes equations for the average per-carrier velocity and energy. These equations are obtained from the second and third velocity moments of the Boltzmann transport equations, respectively. The relaxation-time formulation is used to characterize the collision term. Simulations were also carried out for the same structures using the standard drift-diffusion transport model. It was found that inclusion of the energy-velocity equations significantly modifies the predicted carrier transport behavior and results in somewhat better RF performance under large-signal conditions than that predicted by the drift-diffusion simulation.
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- October 1983
- DOI:
- 10.1109/T-ED.1983.21294
- Bibcode:
- 1983ITED...30.1327M
- Keywords:
-
- Avalanche Diodes;
- Boltzmann Transport Equation;
- Carrier Transport (Solid State);
- Computerized Simulation;
- Electron Diffusion;
- Gallium Arsenides;
- Drift Rate;
- Electron Energy;
- Mathematical Models;
- Monte Carlo Method;
- Relaxation Time;
- Velocity Distribution;
- Electronics and Electrical Engineering