Simulation of GaAs IMPATT diodes including energy and velocity transport equations
Abstract
Simulations have been performed of GaAs hybrid doubledrift IMPATT diodes at 60 and 94 GHz using a transport model which includes equations for the average percarrier velocity and energy. These equations are obtained from the second and third velocity moments of the Boltzmann transport equations, respectively. The relaxationtime formulation is used to characterize the collision term. Simulations were also carried out for the same structures using the standard driftdiffusion transport model. It was found that inclusion of the energyvelocity equations significantly modifies the predicted carrier transport behavior and results in somewhat better RF performance under largesignal conditions than that predicted by the driftdiffusion simulation.
 Publication:

IEEE Transactions on Electron Devices
 Pub Date:
 October 1983
 DOI:
 10.1109/TED.1983.21294
 Bibcode:
 1983ITED...30.1327M
 Keywords:

 Avalanche Diodes;
 Boltzmann Transport Equation;
 Carrier Transport (Solid State);
 Computerized Simulation;
 Electron Diffusion;
 Gallium Arsenides;
 Drift Rate;
 Electron Energy;
 Mathematical Models;
 Monte Carlo Method;
 Relaxation Time;
 Velocity Distribution;
 Electronics and Electrical Engineering