Numerical analysis of heterostructure semiconductor devices
Abstract
It is pointed out that heterostructure semiconductor devices show promise for use in high-performance integrated circuits. With the aid of heterostructures, new devices such as the modulation-doped field-effect transistor (MODFET) with a switching speed of less than 20 ps have been realized. The present investigation is concerned with the numerical simulation of heterostructure semiconductor devices. A one-dimensional, finite-difference numerical implementation is described in order to illustrate the numerical techniques. Particular attention is given to the solution techniques employed when Fermi-Dirac statistics are modeled.
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- September 1983
- DOI:
- 10.1109/T-ED.1983.21271
- Bibcode:
- 1983ITED...30.1151L
- Keywords:
-
- Computerized Simulation;
- Heterojunction Devices;
- Bipolar Transistors;
- Fermi-Dirac Statistics;
- Field Effect Transistors;
- Finite Difference Theory;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering