Numerical solution of the semiconductor transport equations with current boundary conditions
Abstract
The semiconductor transport equations are solved by a hybrid finite-element method with current specified as a boundary condition at device contacts. Single carrier or bipolar devices of arbitrary shape, operating under transient or steady-state conditions, can be simulated with current sources or simple circuit elements connected to device terminals. This paper describes the numerical technique and device applications.
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- September 1983
- DOI:
- Bibcode:
- 1983ITED...30.1092G
- Keywords:
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- Boundary Conditions;
- Boundary Value Problems;
- Carrier Transport (Solid State);
- Computerized Simulation;
- Electric Current;
- Finite Element Method;
- Semiconductor Devices;
- Bipolar Transistors;
- Semiconductor Diodes;
- Electronics and Electrical Engineering