Semiconductor device simulation
Abstract
The most effective way to design VLSI device structures is to use sophisticated, complex two-dimensional (2D) and three-dimensional (3D) models. This paper and its companion (Bank, et al., 1983) discusses the numerical simulation of such device models. Here the basic semiconductor equations including several choices of variables are described. The examples illustrate results obtained from finite-difference and finite-element implementations. The necessary 3D calculations for small-size MOSFET's are stressed. Numerical results on inter-electrode capacitive coupling are included.
- Publication:
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IEEE Transactions on Electron Devices
- Pub Date:
- September 1983
- DOI:
- Bibcode:
- 1983ITED...30.1018F
- Keywords:
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- Computerized Simulation;
- Semiconductor Devices;
- Very Large Scale Integration;
- Doped Crystals;
- Field Effect Transistors;
- Finite Difference Theory;
- Finite Element Method;
- Integrated Circuits;
- Metal Oxide Semiconductors;
- Three Dimensional Models;
- Electronics and Electrical Engineering