Ion implanted Si MESFET's with high cutoff frequency
Abstract
A new technology of ion-implanted silicon MESFET's on high-resistivity substrates has been developed to reduce substrate effects. Consequently, the devices show an improved static behavior concerning pinchoff and drain feedback. Static and dynamic performance will be presented, the latter showing f(max) = 14 GHz calculated from scattering parameter measurements and a large signal switching time of 60 ps. The transit frequency of the intrinsic device is approximately 3.9 GHz.
- Publication:
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IEEE Transactions on Electron Devices
- Pub Date:
- July 1983
- DOI:
- Bibcode:
- 1983ITED...30..837F
- Keywords:
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- Field Effect Transistors;
- Ion Implantation;
- Microwave Switching;
- Schottky Diodes;
- Silicon Films;
- Volt-Ampere Characteristics;
- Electrical Resistivity;
- Frequency Response;
- Metal Surfaces;
- Performance Tests;
- Substrates;
- Time Lag;
- Electronics and Electrical Engineering