InP:Fe photoconductors as photodetectors
Abstract
Impulse response measurements of photoconductors fabricated from Fe-doped, semi-insulating InP crystals are described. Results show purely exponential decay transients with decay times which are inversely related to Fe concentrations. Photoconductive gains as high as 5 have been demonstrated in photoconductors with AuGe and AuSn contacts. Response times from 150 to 1000 ps are observed.
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- April 1983
- DOI:
- Bibcode:
- 1983ITED...30..412H
- Keywords:
-
- Doped Crystals;
- High Gain;
- Indium Phosphides;
- Photoconductors;
- Radiation Detectors;
- Time Response;
- Electric Contacts;
- Electromagnetic Pulses;
- Iron;
- Picosecond Pulses;
- Transient Response;
- Electronics and Electrical Engineering