A low-voltage alterable EEPROM with Metal-Oxide-Nitride-Oxide-Semiconductor /MONOS/ structures
Abstract
Theoretical and experimental investigations to obtain lower voltage Electrically Erasable and Programmable ROM's (EEPROM's) than conventional devices have been performed. The scaled-down Metal-Oxide-Nitride-Oxide semiconductor (MONOS) structure is proposed to realize an extremely low-voltage programmable device. The proposed scaled down MONOS devices enjoy several advantages over MNOS devices, e.g., enlargement of the memory window, elimination of degradation phenomena, and drastic improvement in device yield. Low voltage operation with + or - 6-V supplies is demonstrated by the fabricated scaled down MONOS transistors.
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- February 1983
- DOI:
- 10.1109/T-ED.1983.21085
- Bibcode:
- 1983ITED...30..122S
- Keywords:
-
- Low Voltage;
- Metal-Nitride-Oxide-Semiconductors;
- Read-Only Memory Devices;
- Volt-Ampere Characteristics;
- Electronic Control;
- Fabrication;
- Field Effect Transistors;
- Microprogramming;
- Electronics and Electrical Engineering