Theory of triangular-barrier bulk unipolar diodes including minority-carrier effects
Abstract
The effect of the minority-carrier charge on the barrier height of the triangular-barrier (TB) majority-carrier diode is considered. The consequences of this effect on the device performance as a diode, transistor, photodetector, and a thyristor is briefly delineated. A two-carrier model of the TB diode is developed to account for this effect. Four other approximate models of the TB diode are compared with the two-carrier model, and the range of their validity established. A high-gain TB 'transistor' is proposed based on the mechanism of barrier-height modulation via minority-carrier injection in the TB diode.
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- February 1983
- DOI:
- 10.1109/T-ED.1983.21080
- Bibcode:
- 1983ITED...30...90H
- Keywords:
-
- Carrier Injection;
- Field Effect Transistors;
- Minority Carriers;
- Performance Prediction;
- Semiconductor Diodes;
- Volt-Ampere Characteristics;
- Barrier Layers;
- Energy Bands;
- Light Modulation;
- Mathematical Models;
- Electronics and Electrical Engineering