Power MOSFET dynamic large-signal model
Abstract
A large-signal dynamic circuit model for the double-diffused vertical power MOSFET is reported. The model is physically based and its parameters are readily determined from static curve tracer measurements and small-signal measurements using simple data-reduction techniques. The equivalent circuit can be implemented in general purpose nonlinear circuit analysis computer programs, such as SPICE 2, for use in the analysis and design of switching circuits. The accuracy of the model is verified by the excellent correlation obtained between detailed simulated and measured switching characteristics on an experimental high-speed switching circuit.
- Publication:
-
IEE Proceedings: Solid-State Electron Devices
- Pub Date:
- April 1983
- Bibcode:
- 1983IPSSE.130...73M
- Keywords:
-
- Dynamic Models;
- Equivalent Circuits;
- Field Effect Transistors;
- Metal Oxide Semiconductors;
- Performance Prediction;
- Power Amplifiers;
- Computer Programs;
- Computerized Simulation;
- Data Reduction;
- Network Analysis;
- Nonlinear Equations;
- Power Conditioning;
- Signal Measurement;
- Switching Circuits;
- Transient Response;
- Electronics and Electrical Engineering