Analytical model and characterization of small-geometry buried-channel depletion MOSFET's
Abstract
An analytical model which encompasses short channel, narrow channel, and carrier velocity saturation effects is used in the characterization of small geometry, buried channel depletion MOSFETs (BCD-MOSFETs), calculating the drain current on the basis of the surface electrons induced by the gate-bias voltage and the buried channel junction FET. Theoretical results on drain current are in agreement with experimental results for BCD-MOSFETs with buried channel implantation doses varying from 4 x 10 to the 11th to 2.5 x 10 to the 12th/sq cm, channel lengths in the 4-18 micron range, and 2-20 micron channel widths. In view of comparisons of substrate-bias effect on drain current between BCD-MOSFETs and surface channel enhancement MOSFETs (SCE-MOSFETs), the former are less sensitive to short channel effects and more sensitive to narrow channel effects than SCE-MOSFETs.
- Publication:
-
IEEE Journal of Solid-State Circuits
- Pub Date:
- December 1983
- DOI:
- 10.1109/JSSC.1983.1052033
- Bibcode:
- 1983IJSSC..18..784Y
- Keywords:
-
- Carrier Transport (Solid State);
- Field Effect Transistors;
- Mathematical Models;
- Metal Oxide Semiconductors;
- Volt-Ampere Characteristics;
- Depletion;
- Electron Mobility;
- Ion Implantation;
- Performance Prediction;
- Saturation;
- Surface Layers;
- Electronics and Electrical Engineering