Field and hot carrier enhanced leakage in InGaAsP/InP heterojunctions
Abstract
Observations regarding the temperature sensitivity and power saturation of InGaAsP lasers and light emitting diodes (LED's) have led to extensive studies to find the responsible mechanisms. In the present investigation, attention is given to an electron leakage over the heterobarrier which incorporates the influence of both the electric field and carrier heating effect. A model calculation is conducted regarding the field and hot carrier enhanced electron leakage over the heterobarrier in InGaAsP/InP LED's and lasers. The obtained rsults show the importance of the doping level in the P-InP confining layer in determining the magnitude of the leakage current.
- Publication:
-
IEEE Journal of Quantum Electronics
- Pub Date:
- September 1983
- DOI:
- 10.1109/JQE.1983.1072052
- Bibcode:
- 1983IJQE...19.1335C
- Keywords:
-
- Carrier Injection;
- Heterojunction Devices;
- Hot Electrons;
- Light Emitting Diodes;
- Semiconductor Lasers;
- Carrier Transport (Solid State);
- Electron Diffusion;
- Gallium Arsenide Lasers;
- Indium Phosphides;
- Lasers and Masers