Graded barrier single quantum well lasers  Theory and experiment
Abstract
Optical gain characteristics of quantum well heterostructure lasers are investigated in a broad range from a weakly quantized system to a strongly quantized one utilizing the bandtoband model with k selection rule, the detailed band structure of the quantum well heterostructures, and degenerate statistics. The results are compared to the experimentally observed threshold current densities in graded barrier single quantum well lasers. It is found that the threshold current densities of these quantum well lasers are well explained by the theoretical results in the range of well width from 75 to 300 A. The lowest threshold current density observed is 245 A/sq cm in a heavily doped 100 A single quantum well laser with a 150 micron stripe width and 550 micron length.
 Publication:

IEEE Journal of Quantum Electronics
 Pub Date:
 June 1983
 DOI:
 10.1109/JQE.1983.1071974
 Bibcode:
 1983IJQE...19.1025K
 Keywords:

 Aluminum Gallium Arsenides;
 Band Structure Of Solids;
 Heterojunction Devices;
 Quantum Mechanics;
 Semiconductor Lasers;
 Threshold Currents;
 Barrier Layers;
 Current Density;
 Energy Bands;
 Gradient Index Optics;
 Power Gain;
 Quantum Efficiency;
 Lasers and Masers