Very low threshold InGaAsP mesa laser
Abstract
Very low threshold currents InGaAsP/InP terrace mesa (T-ME) lasers with an unpassivated surface have been fabricated on semi-insulating (SI) InP substrates. Fabrication of the lasers involves a single-step liquid phase epitaxial (LPE) growth and a simple etching process. Lasers operating in the fundamental transverse mode with threshold currents as low as 6.3 mA (for a cavity length of 250 microns) have been obtained. Comparison between the unpassivated lasers and those passivated using the mass transport technique is described.
- Publication:
-
IEEE Journal of Quantum Electronics
- Pub Date:
- May 1983
- DOI:
- 10.1109/JQE.1983.1071930
- Bibcode:
- 1983IJQE...19..783C
- Keywords:
-
- Fabrication;
- Heterojunction Devices;
- Indium Phosphides;
- Liquid Phase Epitaxy;
- Semiconductor Lasers;
- Threshold Currents;
- Etching;
- Far Fields;
- Gallium Arsenides;
- Laser Outputs;
- Quaternary Alloys;
- Lasers and Masers