Device modeling

The state-of-the-art in device modeling is outlined with reference to computer-aided approaches. Attention is given to such basic equations as field equations and their respective boundary conditions as well as to models of physical parameters such as mobility, avalanche generation, and band-gap narrowing. Exact and simplified numerical models are presented including discretization methods and solution methods. A number of representative examples are explained, and two types of analytical models are discussed: MOS transistor models and bipolar transistor models.