Monte Carlo simulation of reflecting contact behavior on ballistic device speed
Abstract
A Monte Carlo simulation of the behavior of a reflecting n-n(+) contact in InP is presented. Electrons are injected at high energy into the InP and are accelerated by an applied electric field over a length of about 1000 A. At the collecting contact, they encounter a possible reflection back into the device. The reflection coefficient at the contact is chosen to vary between 0 and 0.70. The results show that the average electron drift velocity is greatly lowered at low fields throughout the entire device by the reflection at the contact.
- Publication:
-
IEEE Electron Device Letters
- Pub Date:
- September 1983
- DOI:
- 10.1109/EDL.1983.25752
- Bibcode:
- 1983IEDL....4..332B
- Keywords:
-
- Carrier Transport (Solid State);
- Computerized Simulation;
- Electric Contacts;
- Electron Mobility;
- Indium Phosphides;
- Monte Carlo Method;
- Drift Rate;
- Electron Energy;
- Electron Scattering;
- High Energy Electrons;
- Spectral Reflectance;
- Velocity Distribution;
- Electronics and Electrical Engineering