Fully isolated lateral bipolar-MOS transistors fabricated in zone-melting-recrystallized Si films on SiO2
Abstract
A four-terminal device that can be operated either as a lateral n-p-n bipolar transistor or as a conventional n-channel MOSFET has been fabricated in silicon-on-insulator films prepared by graphite-strip-heater zone-melting recrystallization. Common-emitter current gain close to 20 and emitter-base breakdown voltage in excess of 10 V have been obtained for bipolar operation. As a MOSFET, the device exhibits well-behaved enhancement-mode characteristics with a field-effect mobility of about 600 sq cm/V s and drain breakdown voltage exceeding 15 V.
- Publication:
-
IEEE Electron Device Letters
- Pub Date:
- August 1983
- DOI:
- 10.1109/EDL.1983.25729
- Bibcode:
- 1983IEDL....4..269T
- Keywords:
-
- Bipolar Transistors;
- Field Effect Transistors;
- Metal Oxide Semiconductors;
- N-P-N Junctions;
- Silicon Films;
- Volt-Ampere Characteristics;
- Zone Melting;
- Silicon Dioxide;
- Substrates;
- Very Large Scale Integration;
- Electronics and Electrical Engineering