Short-channel effects in 0.5-micron source-drain spaced vertical GaAs FET's - A first experimental investigation
Abstract
- Publication:
-
IEEE Electron Device Letters
- Pub Date:
- April 1983
- DOI:
- 10.1109/EDL.1983.25672
- Bibcode:
- 1983IEDL....4..125K
- Keywords:
-
- Field Effect Transistors;
- Gallium Arsenides;
- Metal Oxide Semiconductors;
- Performance Tests;
- Volt-Ampere Characteristics;
- Fabrication;
- Metallizing;
- Schottky Diodes;
- Spacing;
- Electronics and Electrical Engineering