An empirical model for device degradation due to hot-carrier injection
Abstract
An empirical model for device degradation due to hot-carrier injection in submicron n-channel MOSFETs is presented. Relationships between device degradation, drain voltage, and substrate current are clarified on the basis of experiments and modeling. The presented model makes it possible to predict the lifetime of submicron devices by determining a certain criterion, such as allowing a V(th) shift of 10 mV over ten years. This could also provide quantitative guiding principles for devising 'hot-carrier resistant' device structures.
- Publication:
-
IEEE Electron Device Letters
- Pub Date:
- April 1983
- DOI:
- 10.1109/EDL.1983.25667
- Bibcode:
- 1983IEDL....4..111T
- Keywords:
-
- Carrier Injection;
- Field Effect Transistors;
- Hot Electrons;
- Metal Oxide Semiconductors;
- Service Life;
- Very Large Scale Integration;
- Circuit Reliability;
- Degradation;
- Fabrication;
- Electronics and Electrical Engineering