Application of thermal pulse annealing to ion-implanted GaAlAs/GaAs heterojunction bipolar transistors
Abstract
Post-implant anneals of short (10-15 s) duration are compared with extended (10 min) furnace anneals for the fabrication of Be-implanted MBE-grown GaAlAs/GaAs heterojunction bipolar transistors. It is shown that the thermal pulse anneals can lead to improved Be-implant electrical activation in Ga(0.7)Al(0.3)As and GaAs, to improved contact resistance to Be-implanted GaAs, and to improved transistor characteristics. The transistor improvement is inferred to be due to a reduction in diffusion of the grown-in dopant profile.
- Publication:
-
IEEE Electron Device Letters
- Pub Date:
- April 1983
- DOI:
- 10.1109/EDL.1983.25656
- Bibcode:
- 1983IEDL....4...81A
- Keywords:
-
- Annealing;
- Bipolar Transistors;
- Gallium Arsenides;
- Heterojunction Devices;
- Ion Implantation;
- Aluminum Gallium Arsenides;
- Beryllium;
- Fabrication;
- Integrated Circuits;
- Molecular Beam Epitaxy;
- Pulse Heating;
- Semiconducting Films;
- Electronics and Electrical Engineering