Proton implantation isolation for microwave monolithic circuits

The use of hydrogen implantation as a method for minimizing RF losses for microwave monolithic integrated circuits is investigated. It is demonstrated that the use of the proton implantation isolation technique effectively reduces RF losses for these circuits and that the degree of effectiveness is a function of the induced damage depth. It is found that the RF losses are mostly due to the current conduction in the semiconducting active layer and that the penetration depth of the implanted ion results in induced damage zones which are sufficient for good RF isolation.