A comparison of MOS processes for VLSI

It is pointed out that recent developments in integrated circuit fabrication techniques have led to the realization of devices and circuits with minimum feature sizes into the submicron range. Fundamental and technological limits to device performance and possible alternative approaches are examined, taking into account mobility degradation, hot carrier effects, breakdown phenomena, and interconnections. It is found that the realization of Very Large Scale Integration (VLSI) devices and circuits place severe demands on all aspects of silicon fabrication technology. In an evaluation of technological considerations, attention is given to lithography, etching, dielectrics, aspects of dopant introduction and activation, and new processing ideas. The characteristics and merits of MOS circuits for VLSI design are discussed. It is concluded that silicon devices will dominate the 1980s.