Semiinsulating gallium arsenide for microwave electronics
Abstract
The current status of research on semiinsulating GaAs for microwave-electronics applications is reviewed. Particular consideration is given to the electrophysical properties of doped and undoped semiinsulating GaAs, the effect of the properties of the original material on the characteristics of GaAs layers obtained by impurity implantation, and the thermal stability of semiinsulating GaAs. Possible future trends in the development of semiinsulating GaAs are briefly discussed.
- Publication:
-
Fizika
- Pub Date:
- October 1983
- Bibcode:
- 1983Fiz....26....5M
- Keywords:
-
- Gallium Arsenides;
- Microelectronics;
- Microwave Equipment;
- Semiconductors (Materials);
- Thermal Insulation;
- Electrical Properties;
- Ion Implantation;
- Technology Assessment;
- Thermal Stability;
- Electronics and Electrical Engineering